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DMP2066LDM
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
± 12
Unit
V
V
Drain Current (Note 4) Continuous
Pulsed Drain Current (Note 5)
Body-Diode Continuous Current (Note 4)
T A = 25°C
T A = 70°C
I D
I DM
I S
-4.6
-3.7
-18
2.0
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4); Steady-State
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
1.25
100
-55 to +150
Unit
W
° C/W
° C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV DSS
-20
?
?
V
I D = -250 μ A, V GS = 0V
Zero Gate Voltage Drain Current
T J = 25 ° C
I DSS
?
?
-1
μ A
V DS = -20V, V GS = 0V
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 6)
Static Drain-Source On-Resistance (Note 6)
Forward Transconductance (Note 6)
Diode Forward Voltage (Note 6)
Maximum Body-Diode Continuous Current (Note 4)
I GSS
V GS(th)
I D (ON)
R DS (ON)
g FS
V SD
I S
?
-0.6
-15
?
?
-0.5
?
?
-0.96
?
29
55
9
-0.72
?
± 100
-1.2
?
40
70
?
-1.4
1.7
nA
V
A
m Ω
S
V
A
V DS = 0V, V GS = ± 12V
V DS = V GS , I D = -250 μ A
V GS = -4.5V, V DS = -5V
V GS = -4.5V, I D = -4.6A
V GS = -2.5V, I D = -3.8A
V DS = -10V, I D = -4.6A
I S = -2.1A, V GS = 0V
?
DYNAMIC PARAMETERS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C iss
C oss
C rss
R G
?
?
?
?
820
200
160
2.5
?
?
?
?
pF
pF
pF
Ω
V DS = -15V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q G
Q GS
Q GD
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
10.1
1.5
4.3
4.4
9.9
28.0
23.4
?
?
?
?
?
?
?
nC
ns
V DS = -10V, V GS = -4.5V,
I D = -4.5A
V DS = -10V, V GS = -4.5V,
I D = -1A, R G = 6.0 Ω
Notes:
4. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤ 10s.
5. Repetitive Rating, pulse width limited by junction temperature.
6. Test pulse width t = 300 μ s.
7. Guaranteed by design. Not subject to production testing.
DMP2066LDM
Document number: DS31464 Rev. 4 - 2
2 of 5
www.diodes.com
December 2011
? Diodes Incorporated
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